Atomic scale oxidation of a complex system: O-2/alpha-SiC(0001)-(3x3)

Authors
Amy, F Enriquez, H Soukiassian, P Storino, PF Chabal, YJ Mayne, AJ Dujardin, G Hwu, YK Brylinski, C
Citation
F. Amy et al., Atomic scale oxidation of a complex system: O-2/alpha-SiC(0001)-(3x3), PHYS REV L, 86(19), 2001, pp. 4342-4345
Citations number
19
Categorie Soggetti
Physics
Journal title
PHYSICAL REVIEW LETTERS
ISSN journal
00319007 → ACNP
Volume
86
Issue
19
Year of publication
2001
Pages
4342 - 4345
Database
ISI
SICI code
0031-9007(20010507)86:19<4342:ASOOAC>2.0.ZU;2-T
Abstract
The atomic scale oxidation of the alpha -SiC(0001)-(3 x 3) surface is inves tigated by atom-resolved scanning tunneling microscopy, core level synchrot ron radiation based photoemission spectroscopy, and infrared absorption spe ctroscopy. The results reveal that the initial oxidation takes place throug h the relaxation of lower layers, away from the surface dangling bond, in s harp contrast to silicon oxidation.