Electronic structure and the nature of electronic states of amorphous silicon

In this Letter we present results of Monte Carlo simulation of a model of a morphous Si using an efficient tight-binding technique which gives high qua lity, reliable structure of amorphous Si. We present the structural and ele ctronic properties of the model and study the nature of electronic states. The electronic states near the band edges have been found to be localized u sing participation numbers calculation. (C) 2001 Elsevier Science B.V. All rights reserved.