Use of refractory compounds in microelectronics

This article surveys the literature on the use of high-melting compounds to form thin films. The uses of these materials are classified on the basis o f the following scheme: low-resistance connectors, ohmic contacts, Schottky barriers, electrooptic devices, magnetic materials, barrier layers. The se t of properties and main parameters of films are discussed, and the most pr omising areas for the use of films of high-melting compounds in microelectr onics are noted. The conditions are being created for the replacement of tr aditional metallic films by high-melting compounds.