Correspondence of experimental surface electronic structure of the Si(113)3 x 2 with structure models

Citation
Ks. An et al., Correspondence of experimental surface electronic structure of the Si(113)3 x 2 with structure models, SURF SCI, 478(3), 2001, pp. 123-130
Citations number
17
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
SURFACE SCIENCE
ISSN journal
00396028 → ACNP
Volume
478
Issue
3
Year of publication
2001
Pages
123 - 130
Database
ISI
SICI code
0039-6028(20010510)478:3<123:COESES>2.0.ZU;2-9
Abstract
The surface electronic structures of the Si(113)3 x 2 surface are studied i n detail with angle-resolved photoelectron spectroscopy, Two surface states are observed in the [1(1) over bar 0] direction, A single dangling bond st ate having a broad line shape and large intensity at about 0.95 eV in norma l emission spectrum is separated to two states, S-1 and S-2, at higher emis sion angles, different from the previous study. The dispersions of two stat es in the [1(1) over bar 0] direction are less than about 0.2 and 0.35 eV, respectively. Valence band spectra and LEED observations by Na adsorption o n the 3 x 2 surface at room temperature show that the S-1 state is preferen tially quenched with the phase transition from the 3 x 2 to 3 x 1-Na surfac e. On the other hand, the S-2 state starts to change after the complete que nching of S-1 state and the phase transition. From these results, the origi ns of two dangling bond states are discussed based on Ranke's and the pucke ring structural model for the 3 x 2 surface. (C) 2001 Elsevier Science B.V, All rights reserved.