Contributions to the radiation chemistry of octasilsesquioxanes: unique traps for atomic hydrogen and free radicals at ambient temperature

Citation
R. Stosser et M. Pach, Contributions to the radiation chemistry of octasilsesquioxanes: unique traps for atomic hydrogen and free radicals at ambient temperature, APPL RAD IS, 55(2), 2001, pp. 215-220
Citations number
8
Categorie Soggetti
Multidisciplinary
Journal title
APPLIED RADIATION AND ISOTOPES
ISSN journal
09698043 → ACNP
Volume
55
Issue
2
Year of publication
2001
Pages
215 - 220
Database
ISI
SICI code
0969-8043(200108)55:2<215:CTTRCO>2.0.ZU;2-J
Abstract
Evidence was given for trapping of H-atoms in fluid solutions of octasilses quioxanes. Use was made of the positive effect of scavengers on the yield o f trapped H-atoms. Carbon and silicon-centered radicals formed simultaneous ly through radiation chemical processes were detected, Most of the radical species were identified by the simulation of the corresponding ESR spectra. A wide range of thermal stability is covered by the radicals depending on the chemical nature of the substitutents of the cages and the precursors. ( C) 2001 Elsevier Science Ltd. All rights reserved.