Non-dispersive and air-stable electron transport in an amorphous organic semiconductor

Citation
H. Murata et al., Non-dispersive and air-stable electron transport in an amorphous organic semiconductor, CHEM P LETT, 339(3-4), 2001, pp. 161-166
Citations number
25
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
CHEMICAL PHYSICS LETTERS
ISSN journal
00092614 → ACNP
Volume
339
Issue
3-4
Year of publication
2001
Pages
161 - 166
Database
ISI
SICI code
0009-2614(20010511)339:3-4<161:NAAETI>2.0.ZU;2-Z
Abstract
We report the electron transport properties of an amorphous organic semicon ductor based on silole derivatives. The observed non-dispersive and fast el ectron transport suggests that electron trapping due to energetic disorder is very small. Based on the mobility measurements in air we conclude that o xygen does not function as a significant electron trap. The observed excell ent electron transport properties of this silole derivative are attributed to a large electron affinity originating from its sigma*-pi* conjugation an d a high aromaticity of its anionic species. (C) 2001 Elsevier Science B.V. All rights reserved.