Atomic layer deposition of zirconium titanium oxide from titanium isopropoxide and zirconium chloride

Authors
Rahtu, A Ritala, M Leskela, M
Citation
A. Rahtu et al., Atomic layer deposition of zirconium titanium oxide from titanium isopropoxide and zirconium chloride, CHEM MATER, 13(5), 2001, pp. 1528-1532
Citations number
49
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
CHEMISTRY OF MATERIALS
ISSN journal
08974756 → ACNP
Volume
13
Issue
5
Year of publication
2001
Pages
1528 - 1532
Database
ISI
SICI code
0897-4756(200105)13:5<1528:ALDOZT>2.0.ZU;2-4
Abstract
Atomic layer deposition of ZrxTiyOz thin films using titanium isopropoxide and zirconium chloride as precursors in a temperature range of 200-300 degr eesC was studied. Instead of using water or other compounds as a separate o xygen source, titanium isopropoxide served as both an oxygen and a metal so urce. At 300 degreesC the growth rate was 1.2 Angstrom /cycle. The permitti vity of the ZrxTiyOz films was 45-65, and the leakage current was 10(-4) A/ cm(2) at 0.2 MV/cm. The films were studied by means of spectrophotometry, X -ray diffraction, energy-dispersive X-ray spectroscopy, ion beam analysis, and electrical measurements.