SELF-ORGANIZATION PHENOMENON IN A STRAINED INGAAS SYSTEM AND ITS APPLICATION FOR QUANTUM DISK LASERS

We have recently discovered a novel phenomenon for the fabrication of nanostructures. A self-organization phenomenon of a strained InGaAs/Al GaAs system on a GaAs (311)B substrate during metal-organic vapor phas e epitaxial growth is described, and nano-scale confinement lasers wit h self-organized InGaAs quantum disks are mentioned. Low-threshold ope ration of strained InGaAs quantum disk lasers is achieved under a cont inuous-wave condition at room temperature. The threshold current is ar ound 20 mA. which is considerably lower than that of a reference doubl e-quantum-well laser on a GaAs (100) substrate grown side-by-side. How ever, the light output versus the driving current exhibits a pronounce d tendency towards a saturation compared to that of the (100) quantum well laser. We also discuss new methods using self-organization for na nofabrication to produce high-quality low-dimensional optical devices. considering requirements and the current status for next-generation o ptical devices.