Monolithically integrated 780-nm-band high-power and 650-nm-band laser diodes with real refractive index guided self-aligned structure

780-nm-band high-power and 650-nm-band laser diodes (LDs) with real refract ive index guided self-aligned (RISA) structures are monolithically integrat ed for the first time. High-power and fundamental transverse mode operation at an output power of 100-mW continuous wave (CW) up to 80 degreesC is att ained for the 780-nm-band LD, For the 650-nm-band LD, high temperature and fundamental transverse mode operation at an output power of 10-mW CW up to 80 degreesC is obtained.