InGaN-AlInGaN multiquantum-well LEDs

InGaN-GaN and InGaN-AlInGaN multiquantum-well (MQW) light-emitting diodes ( LEDs) were both fabricated and their optical properties were evaluated by p hotoluminescence (PL) as well as electroluminescence (EL), We found that th e PL peak position of the InGaN-AlInGaN MQW occurs at a much lower waveleng th than that of the InGaN-GaN MQW. PL intensity of the InGaN-AlInGaN MQW wa s also found to be larger, EL intensity of the InGaN-AlInGaN MQW LED was al so found to be larger than that of the InGaN-GaN MQW LED under the same amo unt of injection current. Furthermore, it was found that EL spectrum of the InGaN-AlInGaN MQW LED is less sensitive to the injection current. These ob servations all suggest that we can improve the properties of nitride-based LEDs by using AlInGaN as the barrier layer.