High-speed integrated optoelectronic modulation circuit

Authors
Yap, D Elliott, KR Brown, YK Kost, AR Ponti, ES
Citation
D. Yap et al., High-speed integrated optoelectronic modulation circuit, IEEE PHOTON, 13(6), 2001, pp. 626-628
Citations number
13
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
IEEE PHOTONICS TECHNOLOGY LETTERS
ISSN journal
10411135 → ACNP
Volume
13
Issue
6
Year of publication
2001
Pages
626 - 628
Database
ISI
SICI code
1041-1135(200106)13:6<626:HIOMC>2.0.ZU;2-4
Abstract
A chip-level integrated optoelectronic modulation circuit is described for high-speed digital interconnects. This circuit is composed of an electroabs orption modulator with surface-normal operation at 1550-nm wavelengths and a high-speed electronic driver. A growth/etch/regrowth procedure is used to fabricate the multiple-quantum well modulators and the heterojunction bipo lar transistors (HBTs) of the circuit on a common InP substrate. The measur ed bandwidth is approximately 30 GHz.