In order to design on-chip interconnect structures in a flexible way, a com
puter-aided design approach Is advocated in three dimensions, describing hi
gh-frequency effects such as current redistribution due to the skin effect
or eddy currents and the occurrence of slow-wave modes. The electromagnetic
environment is described by a scaler electric potential and a magnetic vec
tor potential. These potentials are not uniquely defined and in order to ob
tain a consistent discretization scheme, a gauge transformation field is In
troduced. The displacement current is taken into account to describe curren
t redistribution and a small-signal analysis solution scheme is proposed ba
sed upon existing techniques for fields in semiconductors.