Raman scattering by optical phonons in unstrained Ge quantum dots obtained
in GaAs/ZnSe/Ge/ZnSe structures was studied using molecular beam epitaxy. A
shift in the E-1, E-1 + Delta (1) resonance energy due to the quantization
of the spectrum of electron and hole states in quantum dots was observed.
The properties observed were explained with the use of a simplest model of
localization with allowance for the spectrum of Ge electron states. (C) 200
1 MAIK "Nauka/Interperiodica".