Raman E-1, E-1+Delta(1) resonance in unstrained germanium quantum dots

Citation
Ab. Talochkin et al., Raman E-1, E-1+Delta(1) resonance in unstrained germanium quantum dots, JETP LETTER, 73(6), 2001, pp. 297-300
Citations number
11
Categorie Soggetti
Physics
Journal title
JETP LETTERS
ISSN journal
00213640 → ACNP
Volume
73
Issue
6
Year of publication
2001
Pages
297 - 300
Database
ISI
SICI code
0021-3640(2001)73:6<297:REERIU>2.0.ZU;2-N
Abstract
Raman scattering by optical phonons in unstrained Ge quantum dots obtained in GaAs/ZnSe/Ge/ZnSe structures was studied using molecular beam epitaxy. A shift in the E-1, E-1 + Delta (1) resonance energy due to the quantization of the spectrum of electron and hole states in quantum dots was observed. The properties observed were explained with the use of a simplest model of localization with allowance for the spectrum of Ge electron states. (C) 200 1 MAIK "Nauka/Interperiodica".