Modelling of charge carriers' transport and trapping phenomena in one-dimensional structures during thermal stimulation

Authors
Citation
A. Mandowski, Modelling of charge carriers' transport and trapping phenomena in one-dimensional structures during thermal stimulation, J ELECTROST, 51, 2001, pp. 585-589
Citations number
7
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
JOURNAL OF ELECTROSTATICS
ISSN journal
03043886 → ACNP
Volume
51
Year of publication
2001
Pages
585 - 589
Database
ISI
SICI code
0304-3886(200105)51:<585:MOCCTA>2.0.ZU;2-9
Abstract
A simple model for studying charge carriers' trapping and recombination kin etics in one-dimensional insulating solids is considered. Numerical calcula tions are performed for linearly varying temperature that corresponds to th ermally stimulated conductivity (TSC) and thermoluminescence (TL) phenomena . The influence of an external electric field on TSC and TL curves is studi ed. Considering a simple mono-energetic system with no external field appli ed one could notice two distinct peaks. The low-temperature peak correspond s to the nearest-neighbour recombination of charge carriers. The high-tempe rature one relates to the displacement of charge carriers along the one-dim ensional structure. It is shown that low electric field changes height and position of the displacement peak. Strong electric field distorts the whole measured curve and it merges the two peaks into a single one. (C) 2001 Els evier Science B.V. All rights reserved.