We present the first results of the two-step growth of the quasi-bicrystal
structures containing interblock boundaries in epitaxial zinc oxide layers
on alpha -sapphire. Using the intermediate buffer layer technique we have s
uccessfully prepared highly oriented layers of(11 (2) over bar0)ZnO and (00
01)ZnO with clearly pronounced boundaries between blocks on the same (10 (1
) over bar2)Al2O3 substrate surface. The high quality of the quasi-bicrysta
l structures was confirmed by x-ray diffraction and reflected high-energy e
lectron diffraction measurements.