Front-end, single-wafer diffusion processing for advanced 300-mm fabrication lines

Single-wafer, diffusion processing offers the possibility to significantly reduce cycle times, provide 'greener' processes and fulfil key technology r equirements of ever-reducing thermal budgets and improving critical thin-fi lm interface control. This paper will discuss the cycle time and other pote ntial gains of a transition to 300-mm single-wafer diffusion processing and go on to describe work carried out on such processing for advanced nitride CMOS gate and SiGe applications. Multi-product, multi-process ASIC/SOC 300 -mm processing will require aggressive cycle times to ensure early time-to- market, rapid time-to-volume and accelerated development of new technologie s and functionality. One of the key cycle time detractors in current multi- process facilities is the batching requirement in diffusion. The advantages of a transition to single-wafer diffusion processing will be presented. A nitrided CMOS gate application has been studied on a 300-mm single-wafer to ol featuring a module for RTA/RTO/RTN, a module for mono-Si/poly-Si and SiG e CVD deposition and a cool-down chamber equipped with optical metrology to allow direct control of different steps. Different pre- and post-nitridati on steps on oxide or oxide-free silicon surface will be reported that demon strates the advantages of such an integrated single-wafer tool. (C) 2001 El sevier Science B.V. All rights reserved.