Equilibrium point defect concentration in a growing silicon crystal

Authors
Tanahashi, K Inoue, N Akutsu, N
Citation
K. Tanahashi et al., Equilibrium point defect concentration in a growing silicon crystal, MICROEL ENG, 56(1-2), 2001, pp. 133-137
Citations number
3
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
MICROELECTRONIC ENGINEERING
ISSN journal
01679317 → ACNP
Volume
56
Issue
1-2
Year of publication
2001
Pages
133 - 137
Database
ISI
SICI code
0167-9317(200105)56:1-2<133:EPDCIA>2.0.ZU;2-E
Abstract
Equilibrium concentrations of point defects in various stages of Si crystal growth are theoretically analyzed. Local equilibrium concentration at the free surface, in the bulk and during the formation of secondary defects, is considered. We show that local equilibrium concentration is not unique dur ing the crystal growth. (C) 2001 Published by Elsevier Science B.V.