Intrinsic gettering of 300 mm CZ wafers

Even for the most advanced IC manufacturing technology now being transferre d to 300 mm the gettering of metallic impurities is of vital importance. To achieve a gettering performance of Si wafers different approaches can be p ursued: highly boron doped p + substrates, internal gettering IG and getter ing by backside treatment. This contribution will focus on internal getteri ng that can be realised by a sufficient density of oxygen precipitates (als o known as BMDs, Bulk Micro Defects) which is mainly determined by the crys tal growing conditions. The crystal growing represents the largest cost dri ver in the Si manufacturing. Since the transition to 300 mm is purely cost driven the required BMD performance has to consider not only the feasible s upplier capability, but also the cost impact. (C) 2001 Elsevier Science B.V . All rights reserved.