A 10 nm MOSFET concept

In the present work we describe a concept for the fabrication of a 10 nm MO SFET. The combination of an epitaxial silicon structure based on SOI with a n anisotropic etch allows the definition of ultra-short channel devices. By cutting through a highly doped n(++) layer on top of an undoped channel la yer using a KOH-etch, source and drain as well as the channel itself are de fined in one step. Since the etch produces a V-like groove, an extremely sm all source/drain separation defined by the tip region of the V - can be obt ained. We claim that even standard optical lithography can be used in princ iple to generate channels of around 10 nm length. Measured output character istics on first prototypes indicate the possibility of using the proposed c oncept to generate functioning MOSFETs with acceptable short-channel effect s. (C) 2001 Elsevier Science B.V. All rights reserved.