A numerical model of ion implantation into presolar grains

Citation
Ab. Verchovsky et al., A numerical model of ion implantation into presolar grains, NUCL PHYS A, 688(1-2), 2001, pp. 106C-109C
Citations number
6
Categorie Soggetti
Physics
Journal title
NUCLEAR PHYSICS A
ISSN journal
03759474 → ACNP
Volume
688
Issue
1-2
Year of publication
2001
Pages
106C - 109C
Database
ISI
SICI code
0375-9474(20010521)688:1-2<106C:ANMOII>2.0.ZU;2-K
Abstract
Pre-solar grains such as diamond and silicon carbide (found in primitive ch ondritic meteorites), contain isotopically anomalous noble gases. There are two ways that these could have become incorporated into the grains: direct assimilation during grain formation and growth, or subsequent addition aft er the grains had formed. Herein we investigate the latter possibility and explore the role of ion implantation within the interstellar medium (i.e. i nto pre-existing grains distributed in free space. Numerical models are der ived to address the issue of how ion implantation would affect the grain po pulation.