Influence of oxygen doping on the sign of the slope of T-c vs pressure curves in Tl2Ba2CuO6+x

Citation
Tg. Togonidze et al., Influence of oxygen doping on the sign of the slope of T-c vs pressure curves in Tl2Ba2CuO6+x, PHYSICA C, 353(1-2), 2001, pp. 60-64
Citations number
17
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA C
ISSN journal
09214534 → ACNP
Volume
353
Issue
1-2
Year of publication
2001
Pages
60 - 64
Database
ISI
SICI code
0921-4534(20010501)353:1-2<60:IOODOT>2.0.ZU;2-X
Abstract
We report on resistive measurements of the critical temperature of Tl2Ba2Cu O6+x single crystals with x approximate to 0 ("optimally doped", T-c = 89 K ) and x > 0 ("overdoped", T-c = 40 K) under the applied quasihydrostatic pr essure up to 1.1 GPa. The pressure has been found to shift T, upwards for t he optimally doped sample and downwards for the overdoped one. We discuss t he reasons leading to the change of the sign of dT(c)/dP upon overdoping, a nd the ramifications of our data for the existing models put forward to exp lain the influence of oxygen doping and pressure on T,. (C) 2001 Published by Elsevier Science B.V.