Hall coefficient of a dilute two-dimensional electron system in a parallelmagnetic field - art. no. 193304

Measurements in magnetic fields applied at a small angle with respect to th e two-dimensional plane of the electrons of low-density silicon metal-oxide -semiconductor field-effect transistors indicate that the Hall coefficient is independent of parallel field from H = 0 to H > H-sat, the field above w hich the longitudinal resistance saturates and the electrons have reached f ull spin polarization. This implies that the mobilities of the spin-up and spin-down electrons remain comparable at all magnetic fields and suggests t here is strong mixing of spin-up and spin-down electron states.