Bosonization theory of excitons in one-dimensional narrow-gap semiconductors - art. no. 193308

Authors
Lee, HC Yang, SRE
Citation
Hc. Lee et Sre. Yang, Bosonization theory of excitons in one-dimensional narrow-gap semiconductors - art. no. 193308, PHYS REV B, 6319(19), 2001, pp. 3308
Citations number
13
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B
ISSN journal
01631829 → ACNP
Volume
6319
Issue
19
Year of publication
2001
Database
ISI
SICI code
0163-1829(20010515)6319:19<3308:BTOEIO>2.0.ZU;2-I
Abstract
Excitons in one-dimensional narrow-gap semiconductors of anticrossing quant um Hall edge states are investigated using a bosonization method. The excit onic states are studied by mapping the problem into a nonintegrable sine Go rdon type model. We also find that many-body interactions lead to a strong enhancement of the band gap. We have estimated when an exciton instability may occur.