Tubular structures of silicon - art. no. 193409

Citation
G. Seifert et al., Tubular structures of silicon - art. no. 193409, PHYS REV B, 6319(19), 2001, pp. 3409
Citations number
22
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B
ISSN journal
01631829 → ACNP
Volume
6319
Issue
19
Year of publication
2001
Database
ISI
SICI code
0163-1829(20010515)6319:19<3409:TSOS-A>2.0.ZU;2-K
Abstract
In this paper we demonstrate, using density-functional tight-binding theory , that certain classes of silicon-based tubular nanostructures are stable a nd energetically viable. Specifically, we consider silicide and SiH nanotub es. The structures adopted by these nanotubes are very similar to those of previously reported phosphorus nanotubes. As in that case, the Si-based nan otubes have a semiconducting gap, which in contrast to carbon nanotubes is largely independent of the tube diameter and chirality. We further report o n the mechanical properties of the Si-based nanotubes and suggest possible routes towards their synthesis.