Kinetics of exciton photoluminescence in type-II semiconductor superlattices - art. no. 195305

The exciton decay rate at a rough interface in type-II semiconductor superl attices is investigated. it is shown that the possibility of recombination of the indirect excitons at a plane interface essentially affects the kinet ics of the exciton photoluminescence at a rough interface. This is the resu lt of the quantum interference of electrons scattered from the plane interf ace and at the roughnesses. Expressions that relate the parameters of the l uminescence kinetics with the statistical characteristics of the rough inte rface are obtained. The mean height and length of the roughnesses in GaAs/A lAs superlattices are estimated from the experimental data.