Far-infrared intersubband absorption in p-type GaAs/AlxGa1-xAs single heterojunctions under uniaxial compression - art. no. 195308

Theoretical calculations of intersubband light absorption spectra in p-type (001)GaAs/AlxGa1-xAs single heterojunctions under uniaxial compression hav e been performed. The absorption spectrum is characterized by a set of peak s at zero pressure and suffers considerable transformation under uniaxial c ompression. At nonzero pressure, the absorption of light with polarization perpendicular to the direction of the compression is smaller then the absor ption of light with polarization parallel to the direction of the compressi on for the most values of photon energy. It has been demonstrated that the dependence of probability of transitions between subbands with the same val ue of the total angular momentum on the quasi-wave vector differs from the dependence of probability of transitions between subbands with different va lues of the total angular momentum.