Effect of nitrogen on the temperature dependence of the energy gap in InxGa1-xAs1-yNy/GaAs single quantum wells - art. no. 195320

The electronic properties of InxGa1-xAs1-yNy/GaAs single quantum wells have been investigated by photoluminescence and photoreflectance spectroscopy a s a function of temperature. The introduction of nitrogen leads to a sizabl e slow down in the redshift of the ground state recombination energy with t emperature. We explain the observed effects in terms of an anticrossing bet ween states of the conduction band (CB) edge and a N-induced localized leve l resonant with the CB. The extent of this anticrossing, described by the m atrix element V-MN. is derived from the temperature dependence of the excit on recombination energy in a wide compositional range. The measured functio nal dependence of V-MN on nitrogen concentration is compared with results r eported in the literature.