One-step photoemission calculations for ideal GaAs(001) and AlAs(001) surfaces and (GaAs)(m)(AlAs)(n) superlattices - art. no. 195321

Authors
Strasser, T Solterbeck, C Schattke, W Bartos, I Cukr, M Jiricek, P Fadley, CS Van Hove, MA
Citation
T. Strasser et al., One-step photoemission calculations for ideal GaAs(001) and AlAs(001) surfaces and (GaAs)(m)(AlAs)(n) superlattices - art. no. 195321, PHYS REV B, 6319(19), 2001, pp. 5321
Citations number
19
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B
ISSN journal
01631829 → ACNP
Volume
6319
Issue
19
Year of publication
2001
Database
ISI
SICI code
0163-1829(20010515)6319:19<5321:OPCFIG>2.0.ZU;2-8
Abstract
Normal photoemission spectra for the (001) surface of (AlAs)(2)(GaAs)(2) an d (AlAs)(3)(GaAs)(3) superlattices are calculated. They represent the first calculations within the one-step model for layered superlattices. The aim is to develop tools to extract general features from measured spectra speci fic to superlattices. The spectra show the opening of band gaps at the Bril louin zone edge, which are characteristic for the modified periodicity of t he superlattice. Furthermore, the layer-resolved photocurrent allows to ide ntify emissions from AlAs layers hidden below the first two or three GaAs l ayers. As a reference, theoretical normal emission spectra from the pure bu lk GaAs and AlAs(001) surfaces are shown.