Single-electron tunneling in metal droplets in the high conductance regime- art. no. 195405

Citation
St. Ruggiero et al., Single-electron tunneling in metal droplets in the high conductance regime- art. no. 195405, PHYS REV B, 6319(19), 2001, pp. 5405
Citations number
36
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B
ISSN journal
01631829 → ACNP
Volume
6319
Issue
19
Year of publication
2001
Database
ISI
SICI code
0163-1829(20010515)6319:19<5405:STIMDI>2.0.ZU;2-2
Abstract
We present single-electron tunneling results for well-characterized multidr oplet systems in the high conductance regime. The work was conducted with t unnel systems comprising ultra-small Ni droplets. The conductance associate d with individual droplets was estimated to reach 18-19 G(K) in systems exh ibiting especially high conductance. The P(E) (phase correlation) theory ha s been successfully applied to the conductance characteristics of these sys tems. Our results suggest that in the high conductance regime the droplets can be modeled as single, resistively isolated tunnel junctions. Based on a n analysis of the single-electron properties of these systems, the average number of droplets N contributing to the total tunneling conductance can be estimated. For samples in the low conductance regime. it appears that N=1, whereas for samples in the high conductance regime 100<N<1000.