Specific features of the joint influence of lead and bismuth oxides on thermal oxidation of GaAs

The joint influence of lead acid bismuth oxides on the thermal oxidation of GaAs was investigated. For all activator compositions, the hastened format ion of the oxide him was observed due to impurity transfer interaction. The effect of the reciprocal influence of PbO and Bi2O3 was revealed. The effe ct consists in the deviation of the thickness of the resulting oxide layer from the value that should have been achieved on the assumption that the in fluence of the individual activators is parallel and independent. With a Pb O excess, the deviation was negative, and with a Bi2O3 excess the deviation was positive. The effect observed was interpreted using relative integral and partial thicknesses in terms of the interplay of synchronous processes in the unified system.