Citation
Hx. Ren et Y. Hao, The influence of a concave corner on the characteristics of deep-sub-micrometre grooved-gate PMOSFETs, SEMIC SCI T, 16(5), 2001, pp. 310-314
Citations number
8
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
ISSN journal
02681242
→ ACNP
Volume
16
Issue
5
Year of publication
2001
Pages
310 - 314
Database
ISI
SICI code
0268-1242(200105)16:5<310:TIOACC>2.0.ZU;2-7
Abstract
To improve the performance and reliability of grooved gate MOSFETs, the eff
ects of a concave corner on the characteristics of deep sub-micrometre groo
ved-gate PMOSFETs are studied using the device simulator MEDICI. The result
s of our study indicate that the concave corner of a recessed gate influenc
es device characteristics strongly. With an increase of the concave corner,
the threshold voltage increases, the current driving capability is improve
d and the hot-carrier effect is decreased.