Excess dark currents in HgCdTe p(+)-n junction diodes

Authors
Gopal, V Singh, SK Mehra, RM
Citation
V. Gopal et al., Excess dark currents in HgCdTe p(+)-n junction diodes, SEMIC SCI T, 16(5), 2001, pp. 372-376
Citations number
19
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
ISSN journal
02681242 → ACNP
Volume
16
Issue
5
Year of publication
2001
Pages
372 - 376
Database
ISI
SICI code
0268-1242(200105)16:5<372:EDCIHP>2.0.ZU;2-Z
Abstract
This paper presents a result that shows that the trap-assisted tunnelling a nd band to band tunnelling mechanisms make negligible contributions to the dark current in an HgCdTe p(+)-n junction. Alternatively, the excess dark c urrent of these junctions can be fairly well accounted for by invoking the avalanche multiplication mechanism.