MBE growth of (In)GaAsN on GaAs using a constricted DC plasma source

(In)GaAsN epilayers were grown on GaAs substrates by molecular beam epitaxy (MBE) with a DC constricted-plasma source. Nitrogen incorporation efficien cy. crystalline quality, surface morphology and luminescent properties: of the epilayers were studied and correlated with various operation regimes of the source. The nitrogen incorporation efficiency grows with increasing pl asma discharge current. The maximum nitrogen concentration in the epilayer is as high as 3.7 %. GaAsN as thick as 0.35 mum can be pseudomorphically gr own on GaAs, and photoluminescence is observed at room temperature. The cry stalline quality and surface morphology of an epilayer can also be improved by reducing the ion damage at low plasma discharge current. The DC constri cted-plasma source is a promising alternative nitrogen plasma source for in vestigating InGaAsN materials.