Interfacial charges in organic hetero-layer light emitting diodes probed by capacitance-voltage measurements

Citation
S. Berleb et al., Interfacial charges in organic hetero-layer light emitting diodes probed by capacitance-voltage measurements, SYNTH METAL, 122(1), 2001, pp. 37-39
Citations number
5
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SYNTHETIC METALS
ISSN journal
03796779 → ACNP
Volume
122
Issue
1
Year of publication
2001
Pages
37 - 39
Database
ISI
SICI code
0379-6779(20010501)122:1<37:ICIOHL>2.0.ZU;2-J
Abstract
The bias dependent capacitance of organic hetero-layer light emitting diode s (LEDs) based on N,N'-diphenyl-N,N'-bis(1-naphtyl)-1,1-biphenyl-4,4 diamin e (NPB) and tris(8-hydroxyquinoline) aluminium (Alq(3)) shows below the bui lt-in voltage, a step-like change from a value corresponding to the total o rganic layer thickness to a higher value given by the Alq(3) layer thicknes s. The bias and frequency dependent behaviour of the capacitance can be exp lained by the presence of negative charges with a density of -6 x 10(11) e/ cm(2) at the NPB-Alq(3) interface. This leads to an inhomogeneous potential distribution inside the device with a discontinuity of the electric field at the organic-organic interface. (C) 2001 Elsevier Science B.V. All rights reserved.