Space-charge limited conduction with a field and temperature dependent mobility in Alq light-emitting devices

Citation
W. Brutting et al., Space-charge limited conduction with a field and temperature dependent mobility in Alq light-emitting devices, SYNTH METAL, 122(1), 2001, pp. 99-104
Citations number
22
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SYNTHETIC METALS
ISSN journal
03796779 → ACNP
Volume
122
Issue
1
Year of publication
2001
Pages
99 - 104
Database
ISI
SICI code
0379-6779(20010501)122:1<99:SLCWAF>2.0.ZU;2-6
Abstract
Electrical transport in organic Light-emitting devices (OLEDs) based on tri s(8-hydroxyquinolato)aluminium (Alq) is investigated as a function of tempe rature and organic layer thickness. It is shown that the thickness dependen ce of the current provides a unique criterion to discriminate between (1) i njection limited behavior, (2) trap-charge limited conduction with an expon ential trap distribution and a field independent mobility, and (3) trap-fre e space charge limited conduction with a field and temperature dependent mo bility. The observed thickness and temperature dependent current-voltage ch aracteristics are found to be in excellent agreement with trap-free SCLC wi th a hopping type charge carrier mobility. (C) 2001 Elsevier Science B.V. A ll rights reserved.