Molecular analogue memory cell based on electrical switching and memory inmolecular thin films

The structure of a molecular memory cell with its work based on the phenome non of structural instability of one-dimensional conductive molecular syste ms is offered. Electrophysical parameters of the molecular analogue memory cell were investigated. It was established that a memory cell has an S-shap ed voltage-current characteristic with memory. Any impedance of the memory cell can be obtained in the interval between similar to 10 Mn and similar t o 100 Omega depending on the switching condition. A conclusion is drawn tha t the design of memory chips based on the molecular analogue memory cell is promising. (C) 2001 Elsevier Science B.V. All rights reserved.