Electronic properties of carbon nanotubes with defects

Citation
Yi. Prylutskyy et al., Electronic properties of carbon nanotubes with defects, SYNTH METAL, 121(1-3), 2001, pp. 1209-1210
Citations number
11
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SYNTHETIC METALS
ISSN journal
03796779 → ACNP
Volume
121
Issue
1-3
Year of publication
2001
Pages
1209 - 1210
Database
ISI
SICI code
0379-6779(20010315)121:1-3<1209:EPOCNW>2.0.ZU;2-2
Abstract
It is shown that the presence of the local topological defect (i.e., pentag on-heptagon pair) in the structure of Carbon nanotubes (CNT) leads to the f ormation of the heterojunction. The tight-binding calculations for the pi - electron density of stales (DOS) of the bend junction are carried out.