High conductivity of synthetic diamond

Authors
Mamin, RF Inushima, T
Citation
Rf. Mamin et T. Inushima, High conductivity of synthetic diamond, SYNTH METAL, 121(1-3), 2001, pp. 1219-1220
Citations number
7
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SYNTHETIC METALS
ISSN journal
03796779 → ACNP
Volume
121
Issue
1-3
Year of publication
2001
Pages
1219 - 1220
Database
ISI
SICI code
0379-6779(20010315)121:1-3<1219:HCOSD>2.0.ZU;2-3
Abstract
The appearance of the new states of the impurity under the high doping leve l is discussed. On the basis of the Fermi level calculation the model for t he conductivity of heavily boron-doped diamond is proposed. The temperature dependence of conductivity is connected with the co-existence of the valen ce-band and hopping conductivities.