Imprinting electrically conductive patterns directly into Polymethylmethacr
ylate/Polyaniline-camphor sulfonic acid (PMMA/PANI-CSA) blends is investiga
ted. The amount of PANI-CSA is 10 - 40 wt% in the blend and the correspondi
ng conductivity 0.07 - 10 S/cm. M-cresol is used as a solvent. The electric
ally conductive films are spin-coated on glass substrates followed by impri
nting with a silicon stamp. Reactive ion etching (RIE) is used to separate
imprinted lines from each other. The anisotropy larger than 104 in resistan
ce perpendicular and parallel to the imprinted ridges is achieved. Etching
rate is 260 nm/min for PMMA and increases by a factor of 3 for PANI-CSA. Th
e conductivity does not change essentially at elevated temperature in the i
mprint process or due to RIE.