Rectified electron transfer across fullerene multilayers on ITO surface

Authors
Oh, SY Han, SH
Citation
Sy. Oh et Sh. Han, Rectified electron transfer across fullerene multilayers on ITO surface, SYNTH METAL, 121(1-3), 2001, pp. 1369-1370
Citations number
4
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SYNTHETIC METALS
ISSN journal
03796779 → ACNP
Volume
121
Issue
1-3
Year of publication
2001
Pages
1369 - 1370
Database
ISI
SICI code
0379-6779(20010315)121:1-3<1369:RETAFM>2.0.ZU;2-5
Abstract
Stacks of fullerene layers were constructed on the ITO surface. The cyclic voltammetry and chronopotentiometry showed that the diffusion of Fe(CN)(6)( -3) to the ITO surface is inhibited in the presence of the fullerene layers , and that electrons are transferred across the fullerene films. Unidirecti onal electron transfer was observed, indicating a rectifying character of t he fullerene-modified ITO electrodes.