Para- sexiphenyl/C-60 bi- and multilayers grown by hot wall epitaxy

Authors
Matt, G Andreev, A Sitter, H Brabec, CJ Neugebauer, H Hinterdorfer, P Sariciftci, NS
Citation
G. Matt et al., Para- sexiphenyl/C-60 bi- and multilayers grown by hot wall epitaxy, SYNTH METAL, 121(1-3), 2001, pp. 1373-1374
Citations number
6
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SYNTHETIC METALS
ISSN journal
03796779 → ACNP
Volume
121
Issue
1-3
Year of publication
2001
Pages
1373 - 1374
Database
ISI
SICI code
0379-6779(20010315)121:1-3<1373:PSBAMG>2.0.ZU;2-Y
Abstract
We have shown that highly ordered single and multilayer PSP/C-60 structures could be grown on mica by Hot Wall Epitaxy. Therewith C-60/PSP bilayers sh ow a surface morphology, which strongly depends on the layer sequence in th e structure.