Photoemission studies of band alignment in oligothiophene/oligophenyl based devices

Citation
Rir. Blyth et al., Photoemission studies of band alignment in oligothiophene/oligophenyl based devices, SYNTH METAL, 121(1-3), 2001, pp. 1377-1378
Citations number
14
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SYNTHETIC METALS
ISSN journal
03796779 → ACNP
Volume
121
Issue
1-3
Year of publication
2001
Pages
1377 - 1378
Database
ISI
SICI code
0379-6779(20010315)121:1-3<1377:PSOBAI>2.0.ZU;2-K
Abstract
UV photoemission has been used to study band alignment at the interfaces of metal / organic / ITO model devices based on phenyl and thiophene oligomer s. Although Al is the most commonly used metal contact, we show that band a lignment in "clean" Al / oligomer / ITO devices is, in fact, extremely sub- optimal. Not only do Al and ITO have similar work functions, but the intera ction of these organics with both surfaces is of the same form, leading to near identical alignment at both interfaces. The situation, however, can be greatly improved by interface modification e.g, changing the contact metal , or adding controlled amounts of oxygen.