Self-assembled growth of highly oriented para- sexiphenyl thin films

Citation
A. Andreev et al., Self-assembled growth of highly oriented para- sexiphenyl thin films, SYNTH METAL, 121(1-3), 2001, pp. 1379-1380
Citations number
6
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SYNTHETIC METALS
ISSN journal
03796779 → ACNP
Volume
121
Issue
1-3
Year of publication
2001
Pages
1379 - 1380
Database
ISI
SICI code
0379-6779(20010315)121:1-3<1379:SGOHOP>2.0.ZU;2-Z
Abstract
We have used atomic force microscopy to investigate the structure of highly ordered para-sexiphenyl thin films grown by Hot Wall Epitaxy on mica. We h ave shown that the substrate temperature and the growth time are important parameters for control of the film morphology in terms of the degree of ani sotropy and long range order.