We use near-field scanning optical microscopy (NSOM) and spectroscopy to pr
obe the photophysics of thin films of molecular semiconductor tris-8-hydrox
yquinoline aluminum (Alq(3)) on a 10-100 nm scale. Photoluminescence NSOM i
s used to simultaneously map variations in emission and morphology of both
solution-cast and vacuum-deposited films. Vacuum-deposited films annealed a
t 200 degreesC (T > T-g) exhibit greater fluorescence and topographical con
trast than films annealed at 100 degreesC (T < T-g), with the most dramatic
changes occurring in films less than 50 nm thick. These results indicate t
he formation of microcrystalline domains in annealed Alq3 films, which vary
with annealing temperature and film thickness. We have also used NSOM to l
ocally photo-pattern films on a 100 nm scale and to directly measure excito
n diffusion. Our results indicate very long diffusion lengths in comparison
to indirect methods.