Numerical model for simulation of transport and recombination in OLEDs

Authors
Masenelli, B Tutis, E Bussac, MN Zuppiroli, L
Citation
B. Masenelli et al., Numerical model for simulation of transport and recombination in OLEDs, SYNTH METAL, 121(1-3), 2001, pp. 1513-1514
Citations number
9
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SYNTHETIC METALS
ISSN journal
03796779 → ACNP
Volume
121
Issue
1-3
Year of publication
2001
Pages
1513 - 1514
Database
ISI
SICI code
0379-6779(20010315)121:1-3<1513:NMFSOT>2.0.ZU;2-8
Abstract
We present a recently developed numerical code for OLED simulation. This co de contains a detailed description of contacts, charge transport and recomb ination. The route towards the simulation of a complex multilayer device is detailed through examples of single-layer and bilayer devices simulations as well as through the investigation of the action of a LiF thin film on in jection.