Intedigitated p-n junction: a route to improve the efficiency in organic photovoltaic cells

Citation
M. Murgia et al., Intedigitated p-n junction: a route to improve the efficiency in organic photovoltaic cells, SYNTH METAL, 121(1-3), 2001, pp. 1533-1534
Citations number
8
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SYNTHETIC METALS
ISSN journal
03796779 → ACNP
Volume
121
Issue
1-3
Year of publication
2001
Pages
1533 - 1534
Database
ISI
SICI code
0379-6779(20010315)121:1-3<1533:IPJART>2.0.ZU;2-8
Abstract
The short mean free path of excitons photogenerated in real organic photovo ltaic (O-PV) cell strongly reduces the effective active volume of a device. In fact, in a p-n junction O-PV structure, only those excitons that are fo rmed close to the interface between the n-type and the p-type materials are able to dissociate giving free carriers. One of the possible routes to inc rease the efficiency of a O-PV, is to extend the surface area of the juncti on. Within this perspective, an interdigitated structure has been obtained by controlled differential co-sublimation in UHV of C-60 (n-type) and Zn-ph thalocyanine (ZnPc, p-type). Spectroscopic investigation evidenced that the increase of the photovoltaic efficiency is related also to the existence o f a weak charge transfer (CT) absorption state in the near infrared region.