Study of heterojunction diodes using POMA/PANI and amorphous/microcrystalline silicon structures

Photovoltaic diode based on a heterojunction structure combine on amorphous and microcrystalline silicon, deposited by PECVD process, with polyaniline - (PANI) and poly(o-methoxyaniline)-(POMA), using PIN structures. We report IxV characteristic curves of glass/ITO/a-Si:H(p)/POMA or PANI/muc-Si:H(n)/ Al structures. Preliminary results show a dependence of the IxV curves on t he polymer doping level. This structure shows an insulating behavior for un doping or very low doping, photovoltaic effect at medium doping and a typic al resistance curve at high doping level. The device is a promising tool to understand transport and electronic properties of the polymers.