Photoelectrochemical properties of PAni-DBSA/EPDM blends

Citation
D. Carinhana et al., Photoelectrochemical properties of PAni-DBSA/EPDM blends, SYNTH METAL, 121(1-3), 2001, pp. 1569-1570
Citations number
7
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SYNTHETIC METALS
ISSN journal
03796779 → ACNP
Volume
121
Issue
1-3
Year of publication
2001
Pages
1569 - 1570
Database
ISI
SICI code
0379-6779(20010315)121:1-3<1569:PPOPB>2.0.ZU;2-Z
Abstract
We report on studies concerning the photoelectrochemical behavior of a proc essed film of PAni-DBSA blended with EPDM in a photoelectrochemical device constructed using poly(ethylene oxide-co-epichlorohydrin)/NaI-I-2 as polyme ric electrolyte and a platinum counter electrode. Under open-circuit condit ions, the anodic photocurrent obtained was 1 muA cm(-2). In this condition and at positive bias, PAni behaves as n-type semiconductor. However at nega tive bias, an inversion of photocurrent signal confirms the p-type behavior of the polymer. The photocurrent is not limited by redox couple diffusion up to 60 mWcm(-2), after this point the transport time of ionic charge carr iers is higher than the generation time of electronic charge carriers.