A new type of solar cell based on poly(o-methoxyaniline)-POMA as active lay
er is proposed. A simple Schottky structure was prepared: Al/POMA/ITO/glass
. The POMA layer was deposited by the casting method and doped with aqueous
hydrochloric acid solutions. Light absorption in POMA produces carriers fo
r the electrical current. The dark current vs. voltage curves show a rectif
ication feature. Under illumination, the short circuit current increases wi
th the light intensity, characteristic of the photovoltaic effect. Studies
of the dependence on hydrochloric acid concentration, doping time and POMA
layer thickness were done. The easy synthesis of POMA and the simplicity of
this device are the important aspects of this structure.