We present results on photovoltaic devices based on novel thiophene-isothia
naphthene copolymers (PDTI) with pi-pi* band-gaps ranging from 1.2 eV to 1.
8 eV. Single-layer photovoltaic devices were fabricated from films of PDTI
doped with a soluble fullerene derivative [6,6]-phenyl-C-61-butyric-acid-me
thyl-ester (PCBM) as the electron acceptor and blended into poly(methyl met
hacrylate) to enhance the film quality. These devices exhibit spectral resp
onse extending into the infrared and are better matched to the solar spectr
um as compared to standard PPV based ones. Such low band-gap materials also
make possible the construction of dye-sensitized photovoltaic devices that
take advantage of energy transfer from high energy absorbing dyes to the h
ost polymer.